FDW254P mosfet equivalent, p-channel 1.8v specified powertrench mosfet.
*
–9.2 A,
–20 V. RDS(ON) = 0.012 Ω @ VGS =
–4.5 V RDS(ON) = 0.015 Ω @ VGS =
–2.5 V RDS(ON) = 0.0215 Ω .
with a wide range of gate drive voltage (1.8V
– 8V).
Features
*
–9.2 A,
&.
This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V
– 8V).
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